Latest resources from Efficient Power Conversion Corporation (EPC)
eGaN® FET Small Signal RF Performance
Even though the eGaN FET was designed and optimized as a power-switching device, it also exhibits good RF characteristics. The smallest 200 V eGaN ...
Dead-Time Optimization for Maximum Efficiency...
In this white paper EPC continues our exploration of optimization issues and look at the impact of dead-time on system efficiency for eGaN® FETs a...
eGaN® FET Drivers and Layout Considerations
When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gat...