eGaN® FETs for Envelope Tracking
Gallium nitride transistors can be used to improve the efficiency of DC-DC conversion.
In this white paper we look at a new application that is being enabled by gallium nitride technology that has been difficult to implement using traditional silicon MOSFET power devices.
Download this whitepaper to learn more.
Read More
By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.
By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com
Related Categories: Capacitors, Communication, Components, cooling, Power
More resources from Efficient Power Conversion Corporation (EPC)
Selecting eGaN® FET Optimal On-Resistance
Previously published articles showed that eGaN FETs behave for the most part just like silicon devices and can be evaluated using similar performan...
Improve DC-DC Flyback Converter Efficiency Using eGaN FETs
DC-DC converter designers can achieve low cost at low power densities by using flyback converters and enhancement mode gallium nitride transistors....
Dead-Time Optimization for Maximum Efficiency
In this white paper EPC continues our exploration of optimization issues and look at the impact of dead-time on system efficiency for eGaN® FETs a...
